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Thread ID: 62752	2005-10-18 09:55:00	Tweaking RAM voltages and timings for higher OC	DillingerEscapePlan (9098)	Press F1

Post ID	Timestamp	Content	User
397385	2005-10-18 09:55:00	I looked at my bios and the memory timings are such: DDR Timing Setting by [manual] CAS# [CL=2.5] Row Cycle Time (trc) [12bus clocks] Row Refresh Cyc Time (trfc) [14 bus clocks] RAS# to CAS Delay (trcd)[4 bus clocks] Row to Row Delay (trrd)[2 bus clocks] Min RAS# Active Time (tras)[8 bus clocks] Row Precharge Time (trp) [4 bus clocks] Write Recovery Time (twr)[3 bus clocks] Write to Read Delay (twrt)[2 bus clocks] Read to Write Delay (trwt)[4 bus clocks] Refresh Period (tref) [2x3120 cycles] 1T/2T Dram Timings [auto] With the hardware in my sig added to the above settings, which values do I need to modify in order to "loosen" them so I can give them more volts and go for the higher OC? Thanks!	DillingerEscapePlan (9098)
397386	2005-10-18 11:16:00	All of them will have a small impact on performance but to loosen them I would try increasing CAS to 3: The main ones out of that list are: CAS# [CL=2.5] RAS# to CAS Delay (trcd)[4 bus clocks] Row Precharge Time (trp) [4 bus clocks] Min RAS# Active Time (tras)[8 bus clocks] 1T/2T Dram Timings [auto] Switching from 1T to 2T may give you some more headroom for overclocking as well. There's only really a small loss in performance that's measurable in synthetic benchmarks.	vapo (5203)
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